van der Sande, G.; Danckaert, J.;Veretennicoff, I.;Panajotov, K.; Balle, S.
Physical Review A 71, 063801 (1-12) (2005)
Starting from a microscopic model in the free-carrier approximation, we derive an analytical approximation for the optical susceptibility of uniaxially stressed quantum-well lasers at low temperatures by neglecting second-order contributions of the band-mixing phenomenon. The resulting polarization-dependent peak gains, differential peak gains, transparency carrier densities, and linewidth enhancement factors as induced by the uniaxial planar stress are discussed.
Ficheros | PhysRevA_71_063801.pdf (162316 Bytes) |
---|
Buscar en las bases de datos IFISC los seminarios y las presentaciones