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Quantum dots based on spin properties of semiconductor heterostructures

Valín-Rodríguez, Manuel; Puente, Antonio; Serra, Llorenç
Physical Review B 69, 153308 (1-4) (2004)

The possibility of a type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock)we find that even two electrons could form a bound state in these dots.